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all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! ptfb091507fh data sheet 1 of 13 rev. 03.1, 2016-06-09 30 40 50 60 70 19 0 19.5 20.0 20.5 21.0 efficiency (%) gain (db) power sweep, cw v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, gain 10 20 30 40 50 60 70 18.0 18.5 19.0 19.5 20.0 20.5 21.0 41 43 45 47 49 51 53 drain efficiency (%) gain (db) output power (dbm) power sweep, cw v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, efficiency gain thermally-enhanced high power rf ldmos fet 160 w, 28 v, 920 C 960 mhz description the ptfb091507fh is an ldmos fet intended for use in multi- standard cellular power amplifer applications in the 920 to 960 mhz frequency band. features include input and output matching, high gain and thermally-enhanced package with earless fange. manufactured with infneons advanced ldmos process, this device provides excel - lent thermal performance and superior reliability. ptfb091507fh package h-34288-4/2 features ? broadband internal matching ? wide video bandwidth ? typical cw performance, 960 mhz, 28 v - average output power = 160 w - gain = 19.5 db - effciency = 60% ? integrated esd protection ? low thermal resistance ? thermally enhanced package is pb-free and rohs compliant ? capable of handling 10:1 vswr @ 28 v, 160 w (cw) output power rf characteristics single-carrier wcdma specifcations (not subject to production test; verifed by design/characterization in infneon test fxture) v dd = 28 v, i dq = 1.2 a, p out = 50 w average ? = 960 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, par = 7.5 db @ 0.01% ccdf probability characteristic symbol min typ max unit gain gps 20 db drain efficiency h d 38 % adjacent channel power ratio acpr C36 dbc
ptfb091507fh data sheet 2 of 13 rev. 03.1, 2016-06-09 two-tone measurements (tested in infneon test fxture) v dd = 28 v, i dq = 1.2 a, p out = 70 w avg, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain gps 19.5 20 db drain efficiency h d 43.5 45 % intermodulation distortion imd C30 C28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 1.2 a v gs 2.5 3.9 4.5 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c) r qjc 0.31 c/w rf characteristics (cont.) ordering information type and version order code package description shipping ptfb091507fh v1 r0 ptfb091507fhv1r0xtma1 h-34288-4/2, earless fange tape & reel, 50 pcs ptfb091507fh v1 r250 PTFB091507FHV1R250xtma1 h-34288-4/2, earless fange tape & reel, 250 pcs
data sheet 3 of 13 rev. 03.1, 2016-06-09 ptfb091507fh 25 30 35 40 45 50 -40 -30 -20 n efficiency (%) imd (dbc) two-tone drive-up v dd = 28 v, i dq = 2.4 a, ? 1 = 960 mhz, ? 2 = 959 mhz efficiency 10 15 20 25 30 35 40 45 50 -60 -50 -40 -30 -20 38 40 42 44 46 48 50 drain efficiency (%) imd (dbc) output power, pep (dbm) two-tone drive-up v dd = 28 v, i dq = 2.4 a, ? 1 = 960 mhz, ? 2 = 959 mhz efficiency imd 3rd order -40 -30 -20 o rder imb (dbc) two-tone drive-up at selected frequencies v dd = 28 v, i dq = 1.2 a, tone spacing = 1 mhz 960 mhz 940 mhz 920 mhz -60 -50 -40 -30 -20 42 44 46 48 50 52 3rd order imb (dbc) output power, pep (dbm) two-tone drive-up at selected frequencies v dd = 28 v, i dq = 1.2 a, tone spacing = 1 mhz 960 mhz 940 mhz 920 mhz -30 -20 -10 0 30 40 50 60 two-tone broadband gain, efficiency & return loss vs. frequency v dd = 28 v, i dq = 1.2 a, p out = 63 w efficiency in p ut return loss imd3 o ss (db) / imd (dbc) ) / efficiency (%) -50 -40 -30 -20 -10 0 10 20 30 40 50 60 840 890 940 990 1040 frequency (mhz) two-tone broadband gain, efficiency & return loss vs. frequency v dd = 28 v, i dq = 1.2 a, p out = 63 w gain efficiency in p ut return loss imd3 return loss (db) / imd (dbc) gain (db) / efficiency (%) 30 40 50 20.0 20.5 21.0 n efficiency (%) gain (db) two-tone drive-up v dd = 28 v, i dq = 1.2 a, ? 1 = 960 mhz, ? 2 = 959 mhz effi i gain 10 20 30 40 50 19.0 19.5 20.0 20.5 21.0 38 40 42 44 46 48 50 drain efficiency (%) gain (db) output power, pep (dbm) two-tone drive-up v dd = 28 v, i dq = 1.2 a, ? 1 = 960 mhz, ? 2 = 959 mhz efficiency gain typical performance (data taken in infneon test fxture)
ptfb091507fh data sheet 4 of 13 rev. 03.1, 2016-06-09 -45 -35 -25 rder imb (dbc) intermodulation distortion v dd = 28 v, i dq = 1.2 a,, ? 1 = 960 mhz, ? 2 = 959 mhz 3rd order 5th 7th -65 -55 -45 -35 -25 41 43 45 47 49 51 53 3rd order imb (dbc) output power, pep (dbm) intermodulation distortion v dd = 28 v, i dq = 1.2 a,, ? 1 = 960 mhz, ? 2 = 959 mhz 3rd order 5th 7th efficiency acp u p efficiency acp low 10 20 30 40 50 -55 -45 -35 -25 -15 42 44 46 48 50 drain efficiency (%) acp (dbc) average output power (dbm) single-carrier wcdma 3gpp drive-up 960 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz 30 45 60 -20 0 20 c y (%) / gain (db) d b) / acpr (dbc) single-carrier wcdma drive-up 960 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* efficienc y 0 15 -60 -40 42 44 46 48 50 efficien c par ( d average output power (dbm) acpr gain 4 6 8 -20 0 20 par (db) a cpr (dbc) single-carrier wcdma drive-up 960 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* 0 2 4 6 8 -60 -40 -20 0 20 42 44 46 48 50 par (db) acpr (dbc) average output power (dbm) single-carrier wcdma drive-up 960 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz acpr par* typical performance (cont.) *peak-to-average ratio (par) compression at 0.01% probability on ccdf curve
data sheet 5 of 13 rev. 03.1, 2016-06-09 ptfb091507fh 30 45 60 -20 0 20 n cy (%) / gain (db) ( db) / acpr (dbc) single-carrier wcdma drive-up 920 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* efficienc y 0 15 30 45 60 -60 -40 -20 0 20 42 44 46 48 50 efficiency (%) / gain (db) par (db) / acpr (dbc) average output power (dbm) single-carrier wcdma drive-up 920 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz acpr par* efficienc y gain 30 45 60 -20 0 20 c y (%) / gain (db) d b) / acpr (dbc) single-carrier wcdma drive-up 940 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* efficienc y 0 15 -60 -40 42 44 46 48 50 efficien c par ( d average output power (dbm) acpr gain 4 6 8 -20 0 20 par (db) a cpr (dbc) single-carrier wcdma drive-up 940 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* 0 2 4 6 8 -60 -40 -20 0 20 42 44 46 48 50 par (db) acpr (dbc) average output power (dbm) single-carrier wcdma drive-up 940 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz acpr par* 4 6 8 -20 0 20 par (db) a cpr (dbc) single-carrier wcdma drive-up 920 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz par* 0 2 4 6 8 -60 -40 -20 0 20 42 44 46 48 50 par (db) acpr (dbc) average output power (dbm) single-carrier wcdma drive-up 920 mhz v dd = 28 v, i dq = 1.2 a, ? = 960 mhz, 3gpp wcdma signal, par = 7.5:1, bw = 3.84 mhz acpr par* typical performance (cont.) *peak-to-average ratio (par) compression at 0.01% probability on ccdf curve
ptfb091507fh data sheet 6 of 13 rev. 03.1, 2016-06-09 z source z load g s d broadband circuit impedance frequency z source (w) z load (w) mhz r jx r jx 910 2.23 -3.12 1.53 -0.87 920 2.23 -3.03 1.52 -0.84 930 2.23 -2.95 1.50 -0.81 940 2.24 -2.87 1.49 -0.77 950 2.25 -2.80 1.46 -0.74 960 2.26 -2.73 1.44 -0.71 970 2.27 -2.65 1.42 -0.67 see next page for reference circuit information
data sheet 7 of 13 rev. 03.1, 2016-06-09 ptfb091507fh reference circuit tl142 tl140 tl141 tl105 tl104 tl107 tl108 c101 33 pf 1 2 3 tl110 1 2 3 tl111 tl112 tl113 tl114 tl115 tl116 tl117 tl118 tl119 tl120 tl121 tl122 tl123 tl124 tl125 tl126 tl127 tl103 tl106 tl138 1 2 3 tl139 c108 1.5 pf c803 1000 pf r801 1300 ohm r802 1200 ohm r803 10 ohm r804 2000 ohm r805 10 ohm tl128 tl129 1 2 3 tl130 r101 10 ohm 1 2 3 tl131 1 2 3 tl132 1 2 3 tl133 1 2 3 tl109 c802 100000 pf c801 1000 pf tl102 1 2 3 tl101 c109 10000 pf c110 4.7 pf tl134 r102 5100 ohm c102 4710000 pf c103 10000 pf c104 56 pf 1 2 3 tl135 tl136 r103 10 ohm c105 3.3 pf 1 2 3 tl137 c106 3.9 pf c107 56 pf port 3 port 2 port 1 1 2 3 s2 s c b e 1 2 3 4 s1 1 2 3 4 5 6 7 8 s3 c804 1000 pf c805 100000 pf 0 9 1 5 0 7 f h _ b d i n _ 2 - 2 8 - 1 1 gate dut v dd rf _ in 1 2 3 tl205 c205 56 pf tl204 c223 10000000 pf c207 0.2 pf tl229 tl230 tl231 tl232 tl233 tl236 tl237 tl217 tl218 tl219 tl221 tl222 1 2 3 4 tl223 tl224 tl225 tl226 tl227 c209 5.6 pf c215 1 pf c210 1 pf tl209 tl208 tl210 1 2 3 tl211 1 2 3 tl238 1 2 3 tl239 1 2 3 tl240 1 2 3 tl228 c204 10000 pf c213 100000000 pf c220 10000000 pf c211 10000000 pf c217 10000000 pf c212 10000000 pf c214 10000 pf 1 2 3 4 tl207 tl234 c201 100000000 pf 1 2 3 tl220 c222 10000000 pf c208 10000000 pf 1 2 3 tl203 c216 1000000 pf c221 10000000 pf c206 10000000 pf c202 1.2 pf 1 2 3 tl235 c203 3.9 pf 1 2 3 tl201 port 5 port 2 port 4 port 1 1 2 3 tl214 1 2 3 tl215 1 2 3 tl213 1 2 3 tl206 tl212 tl216 1 2 3 4 tl202 c219 10000000 pf c218 1000000 pf 0 9 1 5 0 7 f h _ b d o u t _ 2 - 2 8 - 1 1 drain dut drain dut drain dut drain dut e r = 3 . 48 h = 20 mil ro / ro 4350 reference circuit input schematic for ? = 960 mhz reference circuit output schematic for ? = 960 mhz e r = 3 . 48 h = 20 mil ro / ro 4350
ptfb091507fh data sheet 8 of 13 rev. 03.1, 2016-06-09 reference circuit (cont.) dut ptfb091507fh test fixture part no. ltn/ptfb091507fh pcb rogers ro4350, 0.508 mm [0.020"] thick, 2 oz. copper, e r = 3.48 gerber files find gerber fles for this test fxture on the infneon web site at www.infneon.com/rfpower electrical characteristics at 960 mhz microstrip characteristics dimensions: mm dimensions: mils tl102 0.004 l, 26.8 w w = 2.79, l = 0.76 w = 110, l = 30 tl103 0.007 l, 39.1 w w = 1.68, l = 1.27 w = 66, l = 50 tl111 0.004 l, 5.3 w w1 = 17.78, w2 = 17.78, w3 = 0.76 w1 = 700, w2 = 700, w3 = 30 tl114 0.003 l, 63.9 w w = 0.76, l = 0.51 w = 30, l = 20 tl115 0.026 l, 51.5 w w = 1.10, l = 4.88 w = 44, l = 192 tl116 0.036 l, 39.1 w w = 1.68, l = 6.74 w = 66, l = 266 tl117 0.042 l, 51.5 w w = 1.10, l = 8.00 w = 44, l = 315 tl118 0.007 l, 63.9 w w = 0.76, l = 1.27 w = 30, l = 50 tl119 0.035 l, 39.1 w w = 1.68, l = 6.49 w = 66, l = 256 tl120 0.015 l, 63.9 w w = 0.76, l = 2.92 w = 30, l = 115 tl121 0.100 l, 63.9 w w = 0.76, l = 19.05 w = 30, l = 750 tl122 0.005 l, 51.5 w w = 1.10, l = 1.02 w = 44, l = 40 tl123 0.008 l, 63.9 w w = 0.76, l = 1.52 w = 30, l = 60 tl124 0.006 l, 26.8 w w = 2.79, l = 1.04 w = 110, l = 41 tl125 0.102 l, 5.3 w w = 17.78, l = 17.55 w = 700, l = 691 tl126 0.040 l, 51.5 w w = 1.10, l = 7.57 w = 44, l = 298 tl127 0.004 l, 26.8 w w = 2.79, l = 0.76 w = 110, l = 30 tl130 0.011 l, 39.1 w w1 = 1.68, w2 = 1.68, w3 = 2.03 w1 = 66, w2 = 66, w3 = 80 tl134 0.007 l, 26.8 w w = 2.79, l = 1.19 w = 110, l = 47 tl136 0.008 l, 63.9 w w = 0.76, l = 1.52 w = 30, l = 60 tl137 0.016 l, 5.3 w w1 = 17.78, w2 = 17.78, w3 = 2.79 w1 = 700, w2 = 700, w3 = 110 tl138 0.002 l, 51.5 w w = 1.10, l = 0.33 w = 44, l = 13 tl139 0.015 l, 51.5 w w1 = 1.10, w2 = 1.10, w3 = 2.79 w1 = 44, w2 = 44, w3 = 110 tl201 0.004 l, 51.5 w w1 = 1.10, w2 = 1.10, w3 = 0.76 w1 = 44, w2 = 44, w3 = 30 tl202, 207 0.010 l, 20.9 w w1 = 3.81, w2 = 1.83, w3 = 3.81, w1 = 150, w2 = 72, w3 = 150, w4 = 72 w4 = 1.83 tl203 0.016 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 2.79 w1 = 150, w2 = 150, w3 = 110 tl204 0.014 l, 51.5 w w = 1.10, l = 2.67 w = 44, l = 105 tl205 0.015 l, 51.5 w w1 = 1.10, w2 = 1.10, w3 = 2.79 w1 = 44, w2 = 44, w3 = 110 tl206 0.016 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 2.79 w1 = 150, w2 = 150, w3 = 110 tl210 0.109 l, 5.7 w w = 16.51, l = 18.62 w = 650, l = 733 tl211 0.016 l, 5.7 w w1 = 16.51, w2 = 16.51, w3 = 2.79 w1 = 650, w2 = 650, w3 = 110 tl212 0.014 l, 20.9 w w = 3.81, l = 2.51 w = 150, l = 99 tl213 0.016 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 2.79 w1 = 150, w2 = 150, w3 = 110 tl214 0.007 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 1.27 w1 = 150, w2 = 150, w3 = 50 table continued on next page
data sheet 9 of 13 rev. 03.1, 2016-06-09 ptfb091507fh tl215 0.021 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 3.81 w1 = 150, w2 = 150, w3 = 150 tl216 0.041 l, 20.9 w w = 3.81, l = 7.29 w = 150, l = 287 tl217 0.008 l, 39.1 w w = 1.68, l = 1.52 w = 66, l = 60 tl218 0.016 l, 16.5 w w = 5.08, l = 2.90 w = 200, l = 114 tl219 0.011 l, 39.1 w w = 1.68, l = 2.03 w = 66, l = 80 tl220 0.016 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 2.79 w1 = 150, w2 = 150, w3 = 110 tl221 0.037 l, 5.7 w w = 16.51, l = 6.38 w = 650, l = 251 tl222 0.016 l, 16.5 w w = 5.08, l = 2.89 w = 200, l = 114 tl223 0.011 l, 5.7 w w1 = 16.51, w2 = 1.83, w3 = 16.51, w1 = w1, w2 = 72, w3 = 650, w4 = 1.83 w4 = 72 tl228 0.021 l, 16.5 w w1 = 5.08, w2 = 5.08, w3 = 3.81 w1 = 200, w2 = 200, w3 = 150 tl230 0.006 l, 51.5 w w = 1.10, l = 1.14 w = 44, l = 45 tl231 0.060 l, 51.5 w w = 1.10, l = 11.3 w = 44, l = 445 tl232 0.027 l, 51.5 w w = 1.10, l = 5.08 w = 44, l = 200 tl233 0.006 l, 51.5 w w = 1.10, l = 1.12 w = 44, l = 44 tl234 0.041 l, 20.9 w w = 3.81, l = 7.29 w = 150, l = 287 tl235 0.010 l, 51.5 w w1 = 1.10, w2 = 1.10, w3 = 1.91 w1 = 44, w2 = 44, w3 = 75 tl236 0.014 l, 20.9 w w = 3.81, l = 2.51 w = 150, l = 99 tl237 0.052 l, 5.7 w w = 16.51, l = 8.89 w = 650, l = 350 tl238 0.021 l, 16.5 w w1 = 5.08, w2 = 5.08, w3 = 3.81 w1 = 200, w2 = 200, w3 = 150 tl239 0.021 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 3.81 w1 = 150, w2 = 150, w3 = 150 tl240 0.007 l, 20.9 w w1 = 3.81, w2 = 3.81, w3 = 1.27 w1 = 150, w2 = 150, w3 = 50 reference circuit (cont.) microstrip characteristics dimensions: mm dimensions: mils
ptfb091507fh data sheet 10 of 13 rev. 03.1, 2016-06-09 r 803 rf _ in c 208 c 201 c 214 c 216 c 215 c 102 c 804 r 801 r 805 c 803 s 3 c 805 c 222 2 2 h h d 4 v 6 c 221 c 206 c 205 c 109 c 202 c 801 2 2 h h d 4 v 6 c 105 c 212 c 106 c 204 c 211 c 219 c 108 r 103 c 101 c 107 c 210 c 200 c 203 c 207 c 218 c 213 c 217 c 220 c 110 r 102 c 104 c 103 rf _ out ptfb 091507 _ in _ 01 r 04350 , . 020 ( 62 ) ptfb 091507 _ in _ 01 r 04350 , . 020 ( 62 ) v dd v dd s 1 c 802 b 091507 f h _ c d _ 3 - 08 - 11 c 223 reference circuit board layout (not to scale) component description suggested supplier p/n or comment c101 chip capacitor, 33 pf atc atc100b330jw500xb c102 chip capacitor, 4.71 f digi-key 493-2372-2-nd c103 capacitor, 10 nf atc atc200b103mw50xc c104, c107 chip capacitor, 56 pf atc atc100b560jw500xb c105 chip capacitor, 3.3 pf atc atc100b3r3cw500xb c106, c203 chip capacitor, 3.9 pf atc atc100b3r9cw500xb c108 chip capacitor, 1.5 pf atc atc100b1r5cw500xb c109 capacitor, 10 nf atc atc200b103mw50xc c110 chip capacitor, 4.7 pf atc atc100b4r7cw500xb c201, c213 electrolytic cap., 100 uf, 50 v digi-key pce4442tr-nd c202 chip capacitor, 1.2 pf atc atc100b1r2cw500xb c204 capacitor, 10 nf atc atc200b103mw50xc c205 chip capacitor, 56 pf atc atc100b560jw500xb c206, c208, c211, capacitor, 10 f digi-key 587-1818-2-nd c212, c217, c220, c221, c222 c207 chip capacitor, 0.2 pf atc atc100b0r2cw500xb c209 chip capacitor, 5.6 pf atc atc100b5r6cw500xb c210 chip capacitor, 1 pf atc atc100b1r0cw500xb table continued on next page reference circuit (cont.)
data sheet 11 of 13 rev. 03.1, 2016-06-09 ptfb091507fh c214 capacitor, 10 nf atc atc200b103mw50xc c215 chip capacitor, 1 pf atc atc100b1r0cw500xb c216, c218 chip capacitor, 1 f digi-key 478-3993-2-nd c219, c223 tantalum capacitor, 10 f, 35 v garrett electronics 281m5002106k c801, c803, c804 chip capacitor, 1 nf digi-key pcc1772ct-nd c802, 805 chip capacitor, 100 nf digi-key pcc104bct-nd r101 resistor, 10 w digi-key p10ect-nd r102 resistor, 5.1 w digi-key p5.1kect-nd r103 resistor, 10 w digi-key p10ect-nd r801 resistor, 1.3k w digi-key p1.3kgct-nd r802 resistor, 1.2k w digi-key p1.2kgct-nd r803, r805 resistor, 10 w digi-key p10ect-nd r804 resistor, 2k w digi-key p2.0kect-nd s1 transistor digi-key bcp5616-nd s2 potentiometer, 2k w digi-key 3224w-202ect-nd s3 voltage regulator digi-key lm78l05acm-nd reference circuit (cont.) component description suggested supplier p/n or comment see package outline specifcations on next page
ptfb091507fh data sheet 12 of 13 rev. 03.1, 2016-06-09 package outline specifcations package h-34288-4/2 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d - drain; s - source; g - gate; v - v dd . 5. lead thickness: 0.10 +0.051/C0.025 mm [.004 +0.002/C0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [0.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd 5. lead thickness: 0.10 + 0.051/C0.025 mm [0.004 + 0.002/C0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. 23. 114 [. 910 ] 1 . 016 [. 040 ] 1. 575 [. 062 ] (sph ) 22 . 352 . 200 [. 880 . 008 ] 4. 039 +. 254 - . 127 [ . 159 +. 010 - . 005 ] s l c h - 34288 - 4 / 2 _po _03 _08 - 13 - 2012 l c d g c l 19 . 558 . 510 [. 770 . 020 ] 2 x 12.700 [. 500 ] 45 x 2.032 [45 x .080 ] 2x 1 . 143 [. 045 ] 9. 398 [. 370 ] 9 . 779 [. 385 ] 22 . 860 [. 900 ] 2x 5. 080 [. 200 ] 4. 889 . 510 [. 192 . 020 ] v v 2x 30 4x r0 . 508 +. 381 - . 127 [ r . 020 +. 015 - . 005 ]
data sheet 13 of 13 rev. 03.1, 2016-06-09 edition 2016-06-09 published by infneon technologies ag 81726 munich, germany ? 2010 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of in - fneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international ptfb091507fh v1 page subjects (major changes since last revision) revision history: 2016-06-09 data sheet previous revision: 2011-03-14, data sheet 2 updated ordering code to r0

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